schottky diodes: mnm 200 series medium barrier schottky mixer diodes description the micrometrics mnm 200 series of medium barrier schottky diodes are metal semiconductor junction devices that have a typical short reverse recovery time. this allows their use at high microwave frequencies when the performance of the n-type may be reduced. the forward i-v of schottky diodes is determined by the junction metal used. for every different metal selection there is a different forward voltage characteristic or barrier height . these devices are best suited for applications through 26 ghz. applications medium barrier schottky mixer diodes are ideally suited for use in mixers, doublers and modulators. features multi-junction chips low 1/f noise small junction capacitance packaging chip, glass, ceramic, beam lead 52 schottky diodes micrometrics, inc. 136 harvey road, building c, londonderry, nh 03053 voice: 603-641-3800, fax: 603-641-3500, internet: www.micrometrics.com, e-mail: serv@micrometrics.com typical performance 10 0 .5 1.0 10 1 100 a 100 ma forward current forward voltage (v) www..net
schottky diodes: mnm 200 series electrical characteristics 53 schottky diodes micrometrics, inc. 136 harvey road, building c, londonderry, nh 03053 voice: 603-641-3800, fax: 603-641-3500, internet: www.micrometrics.com, e-mail: serv@micrometrics.com breakdown forward junction series tangential voltage voltage capacitance resistance signal @10 a @1 ma @0 vdc 1 mhz @5 ma sensitivity min max typ typ typ part (v) (v) (pf) (ohms) (db) number 3.0 0.35 0.08 15.0 -52 MNM200 3.0 0.35 0.1 15.0 -50 mnm201 3.0 0.35 0.12 12.0 -48 mnm202 3.0 0.35 0.14 8.0 -45 mnm203 4.0 0.375 0.08 15.0 -52 mnm204 4.0 0.375 0.1 15.0 -50 mnm205 4.0 0.375 0.12 12.0 -48 mnm206 4.0 0.375 0.14 8.0 -45 mnm207 5.0 0.4 0.08 15.0 -52 mnm208 5.0 0.4 0.1 15.0 -50 mnm209 5.0 0.4 0.12 12.0 -48 mnm210 5.0 0.4 0.14 8.0 -45 mnm211 6.0 0.45 0.08 15.0 -52 mnm212 6.0 0.45 0.1 15.0 -50 mnm213 6.0 0.45 0.12 12.0 -48 mnm214 6.0 0.45 0.14 8.0 -45 mnm215 maximum ratings operating temperature -55 c to + 150 c storage temperature -65 c to + 200 c power dissipation @25 c 250mw (derate linearly to zero at 150 c)
|
